高速飞行器壁板颤振的分析模型和分析方法

壁板颤振是壁板结构在高速气流中产生的一种自激振动,在超声速和高超声速飞行器上特别容易发生这种现象。壁板颤振引发的非线性振动将对高速飞行器结构的疲劳强度、飞行性能和飞行安全带来不利的影响。随着高速飞行器设计中各项研究工作的开展,壁板颤振问题受到了到越来越多的重视。本文阐述了目前国内外学者在高速飞行器壁板颤振分析领域的研究现状及壁板颤振研究中常用的六种分析模型,并根据壁板颤振分析中使用的结构理论和气动力理论,详述了这种分类的依据。文中还介绍了温度、气流偏角、壁板几何尺寸及边界条件对壁板颤振的影响规律和目前常用于分析壁板颤振问题的频域和时域方法,总结了各种分析方法的优缺点。最后归纳了目前在高速飞行器壁板颤振研究中得出的几个重要结论,提出了今后在高速飞行器壁板颤振研究中需要解决的若干问题。     

汽车覆盖件工艺补充面参数化设计方法

工艺补充面设计的合理性,是保证覆盖件成形质量的重要条件。工艺补充曲面设计和修改的便利性,是提高设计效率的重要途径。本文提出了建立可修改特征参数的截面线类型库,用双向NURBS蒙皮法分片生成工艺补充面的方法和流程,开发了相应的参数化设计模块。在此基础上可以快速实现基于用户控制的工艺补充面的参数化设计和修改。通过对汽车某些零件等实际覆盖件生成工艺补充面的数值仿真验证了可行性。     

A new solution for the rotation-driven spreading of a thin fluid film

Lie groups are used to solve the equation governing the flow of a thin liquid film subject to centrifugal spreading and viscous resistance. A new implicit solution is found. It is shown how this relates to the previous known solutions for the spreading of an initially flat film, the steady state and a separable solution. New permissible forms for the film evolution are also studied, including solutions exhibiting finite time blow-up. Near the contact line, where the film height tends to zero, an approximate explicit solution is obtained which may be used to describe a film with any size contact angle.     

Stress state of a cylindrical composite panel weakened by a circular hole

The paper studies the stress-strain state of a deep cylindrical panel weakened by a hole and subjected to a tensile load at the outer boundary. A variational difference method is used. A numerical analysis is carried out for an orthotropic panel with low shear stiffness __________ Translated from Prikladnaya Mekhanika, Vol. 42, No. 5, pp. 73–78, May 2006.     

Asymptotics of Neumann harmonics when a cavity is close to the exterior boundary of the domain

We construct the asymptotics (as ε→0) of solutions to the Neumann problem for the Laplace equation and of the corresponding Dirichlet integral. The problem concerns a three-dimensional domain having two connected components of the boundary at the distance ε>0. To cite this article: G. Cardone et al., C. R. Mecanique 335 (2007).     

An investigation into the spreading of a thin liquid drop under gravity on a slowly rotating disk

The axisymmetric spreading of a thin liquid drop under the influence of gravity and rotation is investigated. The effects of the Coriolis force and surface tension are ignored. The Lie group method is used to analyse the non-linear diffusion-convection equation modelling the spreading of the liquid drop under gravity and rotation. A stationary group invariant solution is obtained. The case when rotation is small is considered next. A straightforward perturbation approach is used to determine the effects of the small rotation on the solution given for spreading under gravity only. Over a short period of time no real difference is observed between the approximate solution and the solution for spreading under gravity only. After a long period of time, the approximate solution tends toward a dewetting solution. We find that the approximate solution is valid only in the interval t∈[0,t∗), where t∗ is the time when dewetting takes place. An approximation to t∗ is obtained.     

Electrode metal penetration of amorphous indium gallium zinc oxide semiconductor thin film transistors

Penetration effects of various electrode materials, namely Al, Au, and Cu, on the physical and electrical characteristics of amorphous oxide semiconductor thin film transistors (TFTs) were investigated. Amorphous indium gallium zinc oxide (a-IGZO) TFTs were fabricated with conventional staggered bottom gate structures on a p-type Si substrate. X-ray photoemission spectroscopy (XPS) analysis under the electrode deposition area revealed variations in the oxygen bonding states and material compositions of the a-IGZO layer. Field-emission scanning electron microscopy (FE-SEM) with the line scan of energy dispersive spectroscopy (EDS) showed lateral penetration by the electrode metal. To compare the electrical characteristics of the tested TFTs, the initial current–voltage (I–V) transfer characteristics were examined. In addition, the tested TFTs fabricated using various electrode materials were tested under bias stress to verify the correlations between variations in TFT characteristics and both the metal work function and penetration-induced oxygen vacancies in the channel around the contact area.     

Influence of substrate activation process on structural and optical properties of ZnS thin films

ZnS thin films were deposited on glass substrates by a chemical bath deposition method using a substrate activation process in which aluminum ions become “contaminants” that act as a nucleation center for active components within the deposition solution. The structure and morphology results demonstrate that the films have a ZnS sphalerite crystal structure with a particle size less than 15 nm, and the films consist of small homogeneous grains. The effects of the substrate activation process on the band gap energies and donor-acceptor pair luminescence process were also investigated. A green emission centered at 502 nm was produced due to donor-acceptor transitions from the aluminum acceptor to the ionized and substitution aluminum centers (Al³⁺).     

Thickness effect on the band gap of magnetron sputtered Pb45Se45O10 thin films on Si

Oxygen doped PbSe thin films with different thickness were grown on the Si (100) substrates by magnetron sputtering, and characterized using scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and physical properties measurement system. As the film thickness increased, the intensity of the (200) PbSe prominent diffraction peak increased, while the (220) peak almost vanished, indicating the primary growth direction. The change rate between the light and dark resistance increased with the film thickness, and the maximum of 64.76% was obtained. According to the density functional theory calculations and the experimental results, the band gap of the PbSe thin films decreased from 0.278 eV to 0.21 eV when doped with oxygen. Doping with oxygen during the deposition process is a viable way to prepare PbSe thin films with a tunable band gap. The band gap increased almost linearly with the lattice constant, confirmed by the calculated and experimental results.     

The Thin Film Equation with Non-Zero Contact Angle: A Singular Perturbation Approach

In this paper we consider the thin film equation with prescribed non-zero contact angle condition for a large class of mobility coefficients, in dimension 1. We prove the global in time existence of weak solutions by using a diffuse approximation of the free boundary condition. This approach, which can be physically motivated by the introduction of singular disjoining/conjoining pressure forces had been suggested in particular by Bertsch et al. in [11 Bertsch , M. , Giacomelli , L. , Karali , G. ( 2005 ). Thin-film equations with “partial wetting” energy: Existence of weak solutions . Phys. D 209 : 17 – 27 .[Crossref], [Web of Science ®] , [Google Scholar]].